Non volatile Memories Electronics Engineering Series 1st Edition by Pierre Camille Lacaze ,Jean Claude Lacroix ISBN 1848216238 978-1848216235

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Product details: 

ISBN 10:1848216238 

ISBN 13:978-1848216235

Author:Pierre Camille Lacaze ,Jean Claude Lacroix

Written for scientists, researchers, and engineers, Non-volatile Memories describes the recent research and implementations in relation to the design of a new generation of non-volatile electronic memories. The objective is to replace existing memories (DRAM, SRAM, EEPROM, Flash, etc.) with a universal memory model likely to reach better performances than the current types of memory: extremely high commutation speeds, high implantation densities and retention time of information of about ten years.

Table of contents: 

PART 1. INFORMATION STORAGE AND THE STATE OF THE ART OF ELECTRONIC MEMORIES

CHAPTER 1. GENERAL ISSUES RELATED TO DATA STORAGE AND ANALYSIS CLASSIFICATION OF MEMORIES AND RELATED PERSPECTIVES
Issues arising from the flow of digital information
Current electronic memories and their classification
Memories of the future

CHAPTER 2. STATE OF THE ART OF DRAM, SRAM, FLASH, HDD AND MRAM ELECTRONIC MEMORIES
DRAM volatile memories
The operating principle of a MOSFET (metal oxide semiconductor field effect transistor)
Operating characteristics of DRAM memories
SRAM memories
Non-volatile memories related to CMOS technology
Operational characteristics of a floating gate MOSFET
Flash memories
Non-volatile magnetic memories (hard disk drives – HDDs and MRAMs)
The discovery of giant magneto resistance at the origin of the spread of hard disk drives
Spin valves
Magnetic tunnel junctions
Operational characteristics of a hard disk drive (HDD)
Characteristics of a magnetic random access memory (MRAM)
Conclusion

CHAPTER 3. EVOLUTION OF SSD TOWARD FERAM, FEFET, CTM AND STT-RAM MEMORIES
Evolution of DRAMs toward ferroelectric FeRAMs
Characteristics of a ferroelectric material
Principle of an FeRAM memory
Characteristics of an FeFET memory
The evolution of Flash memories towards charge trap memories (CTM)
The evolution of magnetic memories (MRAM) toward spin torque transfer memories (STT-RAM)
Nanomagnetism and experimental implications
Characteristics of spin torque transfer
Recent evolution with use of perpendicular magnetic anisotropic materials
Conclusions

PART 2. THE EMERGENCE OF NEW CONCEPTS: THE INORGANIC NEMS, PCRAM, RERAM AND ORGANIC MEMORIES

CHAPTER 4. VOLATILE AND NON-VOLATILE MEMORIES BASED ON NEMS
Nanoelectromechanical switches with two electrodes
NEMS with cantilevers
NEMS with suspended bridge
Crossed carbon nanotube networks
NEMS switches with three electrodes
Cantilever switch elaborated by lithographic techniques
Nanoswitches with carbon nanotubes
NEMS-FET hybrid memories with a mobile floating gate or mobile cantilever
Conclusion

CHAPTER 5. NON-VOLATILE PHASE-CHANGE ELECTRONIC MEMORIES (PCRAM)
Operation of an electronic phase-change memory
Composition and functioning of a GST PCRAM
The antinomy between the high resistance of the amorphous state and rapid heating
Comparison of physicochemical characteristics of a few phase-change materials
Key factors for optimized performances of PCM memories
Influence of cell geometry on the current Im needed for crystal melting
Optimization of phase-change alloy composition to improve performance
Influence of nanostructuration of the phase-change material
Recent techniques for improvement of amorphization and crystallization rates of phase-change materials
Problems related to interconnection of PCRAM cells in a 3D crossbar-type architecture
Conclusion

CHAPTER 6. RESISTIVE MEMORY SYSTEMS (RRAM)
Main characteristics of resistive memories
Unipolar system
Bipolar system
Electrochemical metallization memories
Atomic switches
Metallization memories with an insulator or a semiconductor
Conclusions on metallization memories
Resistive valence change memories (VCM)
The first work on resistive memories
Resistive valence change memories after the 2000s
A perovskite resistive memory (SrZrO3) with better performance than Flash memories
Electroforming and resistive switching
Hafnium oxide for universal resistive memories?
Conclusion

CHAPTER 7. ORGANIC AND NON-VOLATILE ELECTRONIC MEMORIES
Flash-type organic memories
Flexible FG-OFET device with metal floating gate
Flexible organic FG-OFET entirely elaborated by spin coating and inkjet printing
Flexible OFETs with charge-trap gate dielectrics
OFETs with conductive nanoparticles encapsulated in the gate dielectric
Redox dielectric OFETs
Resistive organic memories with two contacts
Organic memories based on electrochemical metallization
Resistive charge-trap organic memories
Molecular memories
Conclusion

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Tags: Pierre Camille Lacaze, Jean Claude Lacroix, volatile, Memories, Electronics