Magnetic Memory Fundamentals and Technology 1st Edition by Denny D Tang, Yuan Jen Lee ISBN 0521449642 9780521449649

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ISBN 10: 0521449642 
ISBN 13: 9780521449649
Author: Denny D Tang, Yuan Jen Lee

Magnetic Memory Fundamentals and Technology 1st Table of contents:

1 Basic electromagnetism
1.1 Introduction
1.2 Magnetic forces, poles and fields
1.3 Magnetic dipoles
1.4 Ampère’s circuital law
1.5 Biot–Savart Law
1.6 Magnetic moments
1.7 Magnetic dipole energy
1.8 Magnetic flux
1.9 Magnetic induction
1.10 Classical Maxwell equations of electromagnetism
1.11 Inductance
1.12 Equation tables
Homework
References
2 Magnetic films
2.1 Origin of magnetization
2.1.1 Russell–Saunders coupling
2.1.2 jj coupling
2.2 Introduction of magnetic materials
2.2.1 Diamagnetism
2.2.2 Paramagnetism
2.2.3 Ferromagnetism
2.2.4 Antiferromagnetism
2.2.5 Ferrimagnetism
2.3 Ferromagnet/antiferromagnet bilayer structure
2.3.1 Intuitive picture in exchange bias
2.3.2 Positive exchange bias
2.3.3 Theories of exchange bias
2.3.4 AFM domain wall model
2.3.5 Random field model
2.4 Interlayer exchange coupling in ferromagnet/metal/ferromagnet multilayer
2.4.1 Ruderman–Kittel–Kasuya–Yosida interaction
2.4.2 Néel coupling
2.5 Micromagnetic simulation
2.5.1 Anisotropy energy
2.5.2 Exchange energy
2.5.3 Magnetostatic energy
2.5.4 Zeeman energy
Homework
References
3 Properties of patterned ferromagnetic films
3.1 Introduction
3.2 Edge poles and demagnetizing field
3.2.1 Demagnetizing factor of elliptic-shaped film
3.2.2 Edge curling
3.3. Magnetic domain
3.3.1 Transition region between domains: domain wall
3.3.2 Bloch wall and Néel wall
3.3.3 C-state, S-state and vortex
3.4 Magnetization behavior under an external field
3.4.1 Magnetization rotation in a full film
3.4.2 Magnetization rotation in a patterned film
3.5 Magnetization switching
3.5.1 Magnetization rotation and switching under a field in the easy-axis direction
3.5.2 Magnetization rotation and switching under two orthogonal applied fields
3.6 Magnetization behavior of a synthetic antiferromagnetic film stack
Homework
References
4 Magnetoresistance effects
4.1 Introduction
4.2 Anisotropic magnetoresistance
4.3 Giant magnetoresistance
4.4 Tunneling magnetoresistance
4.4.1 Giant tunneling magnetoresistance
4.4.2 Tunneling magnetoresistance in perpendicular magnetic tunneling junction
Homework
References
5 Field-write mode MRAMs
5.1 Introduction
5.2 Magnetic tunnel junction RAM cell
5.2.1 Cross-point array
5.2.2 1T-1MTJ cell
5.3 Read signal
5.3.1 Sense reference cell
5.3.2 Sense amplifier
5.4 Write bit cell with magnetic field
5.4.1 Write-field conversion efficiency
5.4.2 Write-line cladding
5.5 Astroid-mode MRAM
5.5.1 Switching-energy barrier of Astroid-mode write
5.5.2 Write-error rate of a bit cell
5.5.3 Write soft error rate of an array of memory cells
Homework
5.5.4 Solution to the write disturbance problem
5.6 Toggle-mode MRAM
5.6.1 Toggle-mode cell
5.6.2 Switching of SAF free layer in toggle-mode write
5.6.3 Energy diagram of toggle operation
5.6.4 Write-current reduction
5.7 Characterization method of MRAM chip write performance
5.8 Thermally assisted field write
5.9 Multi-transistor cells for high-speed MRAM operation
References
6 Spin-torque-transfer mode MRAM
6.1 Introduction
6.2 Spin polarization of free electrons in ferromagnets
6.3 Interaction between polarized free electrons and magnetization – macroscopic model
6.4 Spin-torque transfer in a multilayer thin-film stack
6.5 Spin-transfer torque and switching threshold current density
6.6 Switching characteristics and threshold in magnetic tunnel junctions
6.6.1 Regimes of write pulse width
6.6.2 Switching probability in the thermal regime
6.6.3 Spin-torque-transfer switching under a magnetic field
6.6.4 Magnetic back-hopping
6.7 Reliability of tunnel barriers in MTJs
6.8 SPICE model of MTJs and memory cells
6.9 Memory cell operation
6.9.1 I–V characteristics of STT memory cell during write
6.9.2 Read and write voltage window of STT memory cell
6.9.3 Sense signal margin
Homework
6.9.4 Write-to-breakdown-voltage margin
6.10 Data retention and Eb extraction method
6.11 Thermal stability of STT memory chip
Homework
6.12 Write-current reduction
6.12.1 Nanocurrent-channel film-stack structure
6.12.2 Double-spin-filter structure
6.12.3 Perpendicular MTJ
6.13 Direct observation of magnetization reversal
References
7 Applications of MTJ-based technology
7.1 Introduction
7.2 MRAM market position
7.3 MTJ applications in CMOS SoC chips
7.3.1 Embedded memory in logic chips
7.3.2 Unbalanced MTJ flip-flop
7.3.3 Non-volatile multiplexer
7.3.4 MTJ data register
7.4 System-on-chip power reduction
7.5 Runtime reconfigurable electronic system
References
Appendix A: Unit conversion table for cgs and SI units
Appendix B: Dimensions of units of magnetism
Appendix C: Physical constants
Appendix D: Gaussian distribution and quantile plots
Appendix E: Weibull distribution
Appendix F: Time-dependent dielectric breakdown (TDDB) of magnetic tunnel junction devices
Appendix G: Binomial distribution and Poisson distribution
Appendix H: Defect density and the breakdown/TMR distribution of MTJ devices
Appendix I: Fe, Ni and Co material parameters
Appendix J: Soft error, hard fail and design margin

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