Compound Semiconductors 2002 1st Edition by Marc Ilegems, Gunter Weimann, Joachim Wagner ISBN 1482269104 9781482269109

Compound Semiconductors 2002 1st Edition by Marc Ilegems, Gunter Weimann, Joachim Wagner – Ebook PDF Instant Download/Delivery: 1482269104, 9781482269109
Full download Compound Semiconductors 2002 1st Edition after payment

Product details:

ISBN 10: 1482269104 
ISBN 13: 9781482269109
Author: Marc Ilegems, Gunter Weimann, Joachim Wagner

Compound Semiconductors 2002 1st Table of contents:

Section 1: Growth

• GaAs on silicon using oxide buffer layers

• Ultra shallow GaAs sidewall tunnel junctions with low-temperature selective regrowth

• Growth and properties of polycrystalline GaN on ZnO/Si substrates by ECR-MBE

• Single crystalline InN films on Si (111) substrates

• Growth and evaluation of CdTe/Si (111) by hot wall epitaxy

• Surface reconstruction acting as micro mask during in-situ layer-by-layer etching of GaAs

• Comparative study of p-type dopants Mg and Be in GaN grown by RF-MBE

• Area selective epitaxy of anti-dot structure by solid source MBE with MEE deposition

Section 2: Processing and Characterization

• Interface states and bulk traps in GaAs MIS admittance

• Electrical isolation of p-type InP and InGaAs by iron implantation

• Inductively coupled argon plasma enhanced quantum well intermixing in InGaAs/InGaAsP lasers

• Annealing studies of Si-implanted GaN by Hall-effect and photoluminescence

• Optical evaluation of carrier concentration fluctuations in doped InP

• Drift of defects under electric field in CdSe and CdS crystals

• Electron thermalization length in AlGaAs/GaAs quantum wells

• Optical and structural investigations of GeSiO2 systems

• Thermal quenching of emission from InAs quantum dots in InGaAs/GaAs MQW

• Guided surface-acoustic-wave modes in AlN on SiC

• Photoluminescence from deep levels in Fe-doped InP

• Many-body effects in heavily doped AlGaAs/InGaAs/GaAs heterostructures

• Two-dimensional mapping of resistivity in semi-insulating GaAs wafers

• Sonic-stimulated temperature rise around dislocation

• Cluster variation method for semiconductor alloys

• Exciton formation inhibition in GaInAs/InP Fe doped quantum wells

• Electron traps in Ga(As,N) grown by MBE

• Quantum lifetime influence on quantum Hall plateaus

• Intersubband transitions in strain compensated InGaAs/AlAs quantum wells

• Interfacial and piezoelectric properties of highly strained InGaAs/GaAs QWs

Section 3: Quantum-Wires and -Dots

• Carrier dynamics in self-organized In(Ga)As/Ga(Al)As quantum dots

• Single-electron transistors

• Selective formation of high-density InAs/GaAs quantum dots

• Near-field spectroscopy of single semiconductor quantum dots

• Magnetic properties of (Ga,Mn)N on 4H-SiC by MBE

• Selective MBE growth of GaAs ridge quantum wire arrays on patterned substrates

• Large transition energy separation in InAs/GaAs quantum dots at 1.31 µm emission

• Optical spectra of quantum dot aggregates

• Self-organized InAs quantum dot growth and in-situ annealing

• Narrow size-dispersion CdSe quantum dots on ZnSe by modified MEE technique

• Spectroscopy of high-density InAs/GaAs quantum dots

• Properties of InGaAs coupled quantum wires on vicinal (111)B GaAs

• One-dimensional free exciton in CdTe/CdMgTe quantum wires

• Self-assembled GaN nanorods on Si (111)

• Electroluminescence of asymmetric coupled GaAs/AlGaAs V-groove quantum wires

• Effects of nitrogen in In(Ga)As/GaAs quantum dots

• Photoconductivity of GaAs/AlGaAs quantum wires

Section 4: Electronic Devices

• GaAs HBTs with reduced collector capacitance for high-speed ICs and microwave applications

• InP/GaAsSb/InP heterojunction bipolar transistors

• GaAs IC manufacturing for wireless communications in Taiwan

• Silicon germanium technologies for high-speed digital/analog applications

• AlGaN/GaN HEMTs grown by MBE on sapphire, SiC, and HVPE-GaN templates

• High power AlGaN/GaN HEMTs

• High breakdown field Npn AlGaN/InGaN/GaN HBTs

• Multi wafer epitaxy of GaN/AlGaN heterostructures for power applications

• Fabrication and performance of oscillators in GaInP/GaAs-HBT MMICs up to 40 GHz

• Resonant tunneling delta-sigma modulator demonstration

• InAs/AlGaSb heterostructure displacement sensors

• Charge balanced Ga2O-GaAs interface for self-aligned GaAs p-channel devices

• Quantum transport phenomena in resonant tunneling structures (simulation)

• Channel temperature and negative resistance correlation in AlGaN/GaN HEMTs

• Temperature effects on avalanche properties of sub-micron devices

• In0.53Ga0.47As ionization coefficients from photomultiplication

• InGaP/InGaAs/GaAs double channel pseudomorphic HEMTs

• 70-nm gate PHEMT fabrication by trilayer resist process

• Low-k BCB passivation of 0.1 µm gamma gate PHEMTs

• Design of low loss transmission lines on GaAs substrates via surface micromachining

• Correlation of pulsed IV measurements and AlGaN/GaN HEMT power performance

• 120 nm gate length e-beam and nanoimprint T-gate GaAs pHEMTs with non-annealed ohmic contacts

• Composite-emitter HBTs with reduced turn-on voltage and offset voltage

• Electronic states at free surfaces and Schottky interfaces of AlGaN/GaN heterostructures

• Direct S-parameter extraction by 2D device AC-simulation

Section 5: Optoelectronic Devices

• High-power blue-violet lasers on 3-inch sapphire and GaN substrates

• III/V nitride LEDs and lasers

• Advances in continuous wave quantum cascade lasers

• Photonic-crystal distributed-feedback lasers (edge and surface emitting)

• Quantum well infrared photodetectors and thermal imaging cameras

• Temperature sensitivity of high-power GaAs-based 2.1 µm diode lasers

• Long-wavelength WDM VCSEL arrays fabricated by novel methods

• High gain, low noise 4H-SiC UV avalanche photodiodes

• Novel microcavity LEDs

• High extraction efficiency AlGaInP microcavity LEDs at 650 nm with AlGaAs-AlOx DBR

• Orientation-mismatched wafer bonding for polarization control of 1.3 µm VCSELs

• Population inversion enhancement by resonant magnetic confinement in THz QCLs

• Interferometric temperature mapping of GaAs-based QCLs

• Sensitivity of intersubband absorption linewidth and mobility to interface roughness scattering

• Improved temperature performance of GaAs/AlGaAs QCLs

• Electron-phonon strong coupling in intersubband resonators

• 640×512 pixel four-band QWIP focal plane arrays

• Giant polarized photoluminescence and photoconductivity in type-II GaAs/GaAsSb MQWs

• Efficient nitride-based short-wavelength emitters with enhanced hole injection

• Polarization switch in three-contact VCSELs

• Dynamics and noise in semiconductor lasers under strong optical feedback

• High-performance optically pumped 1.55 µm VCSELs for telecom

• GaN-based single mirror LEDs

• Nonlinear semiconductor materials for passive low-loss optical combiners

• Optically pumped vertical external cavity semiconductor thin-disk lasers at 660 nm CW

• Polarization-sensitive photodetectors based on strained M-plane GaN

• Modulation efficiency of depleted InGaAsP/InP ridge waveguide phase modulators

• Continuous wave far-infrared quantum cascade lasers

• Resonant phonon-assisted depopulation in type-I and type-II intersubband lasers

• Mid-infrared QCL operation above room temperature

• Electron temperature and scattering transport in terahertz GaAs/AlGaAs QCLs

• Graded interface 9.3 µm quantum cascade lasers

People also search for Compound Semiconductors 2002 1st:

compound semiconductors 2002
    
compound semiconductor devices
    
compound semiconductor news
    
compound semiconductor magazine
    
compound semi

Tags: Marc Ilegems, Gunter Weimann, Joachim Wagner, Compound Semiconductors